3 April 2010 3D physical modeling for patterning process development
Author Affiliations +
Proceedings Volume 7641, Design for Manufacturability through Design-Process Integration IV; 76410B (2010); doi: 10.1117/12.846637
Event: SPIE Advanced Lithography, 2010, San Jose, California, United States
In this paper we will demonstrate how a 3D physical patterning model can act as a forensic tool for OPC and ground-rule development. We discuss examples where the 2D modeling shows no issues in printing gate lines but 3D modeling shows severe resist loss in the middle. In absence of corrective measure, there is a high likelihood of line discontinuity post etch. Such early insight into process limitations of prospective ground rules can be invaluable for early technology development. We will also demonstrate how the root cause of broken poly-line after etch could be traced to resist necking in the region of STI step with the help of 3D models. We discuss different cases of metal and contact layouts where 3D modeling gives an early insight in to technology limitations. In addition such a 3D physical model could be used for early resist evaluation and selection for required ground-rule challenges, which can substantially reduce the cycle time for process development.
© (2010) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Chandra Sarma, Amr Abdo, Todd Bailey, Will Conley, Derren Dunn, Sajan Marokkey, Mohamed Talbi, "3D physical modeling for patterning process development", Proc. SPIE 7641, Design for Manufacturability through Design-Process Integration IV, 76410B (3 April 2010); doi: 10.1117/12.846637; https://doi.org/10.1117/12.846637

3D modeling

Critical dimension metrology

Data modeling

Process modeling

Scanning electron microscopy

Semiconducting wafers


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