Variability aware timing models at the standard cell level

Eric Y Chin; Cooper S Levy; Andrew R. Neureuther

doi:10.1117/12.846689

2 April 2010 Variability aware timing models at the standard cell level

Eric Y Chin, Cooper S Levy, Andrew R. Neureuther

Proceedings Volume 7641, Design for Manufacturability through Design-Process Integration IV; 76410H (2010) https://doi.org/10.1117/12.846689
Event: SPIE Advanced Lithography, 2010, San Jose, California, United States

Abstract

Standard cell timing variations are caused by process non-idealities that are not traditionally captured within standard timing characterization tools. This paper presents two approaches to creating variability aware standard cell timing models in the presence of lithographic variations. The first approach uses circuit simulation of rectangular transistors to create delay sensitivity tables to transistor length and transistor width for each cell. The second approach utilizes lithography contours to characterize cell performance. The contour based approach is used to characterize two standard cells in the presence of active and poly layer focus exposure variations, misalignment, and layout proximity effects. The delay response to focus and exposure exhibits Bossung-like delay behavior and can be fit with a compact parameter delay model. Both approaches lead to the creation of variability aware timing models in the form of delay variability tables or compact parameter timing models. These models enable static timing analysis tools to perform critical path variability aware delay analysis using a presumed layout-dependent distribution of process parameters with little expense in runtime.

Citation Download Citation

Eric Y Chin, Cooper S Levy, and Andrew R. Neureuther "Variability aware timing models at the standard cell level", Proc. SPIE 7641, Design for Manufacturability through Design-Process Integration IV, 76410H (2 April 2010); https://doi.org/10.1117/12.846689

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