30 March 2010 Thickness effect on Schottky diode characteristics of ZnO thin film
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Abstract
Surface morphologies of the ZnO thin films with various thicknesses have been investigated. ZnO sol was prepared with zinc acetate dihydrate, 2-methoxyethanol, and monoethanolamine. Thicknesses of the ZnO films were controlled by a multiple coating process. The ZnO thin films were annealed at 750 °C. The film thickness increased as the coating time increased. From the XRD study, it is observed that the ZnO films exhibit wurtzite structure (002) and the diffraction intensity increased as the thickness increased. Effect of thickness on Schottky behavior was evaluated by measuring current-voltage characteristics. The pristine ZnO thin films with thickness of 132 nm exhibited Schottky diode characteristics with high rectification ratio.
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Jyoti Nayak, Jyoti Nayak, Yi Chen, Yi Chen, Kwang Sun Kang, Kwang Sun Kang, Jaehwan Kim, Jaehwan Kim, } "Thickness effect on Schottky diode characteristics of ZnO thin film", Proc. SPIE 7646, Nanosensors, Biosensors, and Info-Tech Sensors and Systems 2010, 76461B (30 March 2010); doi: 10.1117/12.847486; https://doi.org/10.1117/12.847486
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