30 March 2010 High crystalline GaN nanoparticle and GaN thin film fabrication
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Single-phase hexangonal wurtzite GaN nanoparticles and GaN thin film were prepared by the sol-gel techniqiue.using Ga(NO3)3. For GaN thin films, Ga(NO3)3 was hydrolyzed with ethanol and acetic acid and aged for one day. GaO(OH) thin layer was fabricated with spin-coating and heating at 200 °C. For GaN nanoparticles, the Ga(NO3)3 was dissolved in concentrated nitric acid and adjusted pH to 8.5 using NH4(OH). Citric acid was added to the Ga(NO3)3 solution and heated 80 °C for 2 h. The solution was heated at 400 °C for 4 h to obtain the Ga2O3 nanoparticles. The GaO(OH) and Ga2O3 were annealed in a tube furnace at 900 °C for 1 h with NH3 gas flow. The thickness of GaN thin film was approximately 46 nm. The grain size of the GaN thin film after converting from GaO(OH) to GaN, which was obtained by atomic force microscope image, was approximately 25-35 nm. The diameter of the GaN nanoparticles is approximately 15 nm with lattice fringes of 2.7 Α. The crystall has hexagonal wurzite structure, which is conformed by X-ray diffraction (XRD) pattern.
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Yi Chen, Yi Chen, K. S. Kang, K. S. Kang, J. Nayak, J. Nayak, Jaehwan Kim, Jaehwan Kim, "High crystalline GaN nanoparticle and GaN thin film fabrication", Proc. SPIE 7646, Nanosensors, Biosensors, and Info-Tech Sensors and Systems 2010, 76461J (30 March 2010); doi: 10.1117/12.847484; https://doi.org/10.1117/12.847484


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