6 October 2010 Effect of growth temperature on the properties of Al-doped ZnO thin film prepared by RF magnetron sputtering
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Proceedings Volume 7655, 5th International Symposium on Advanced Optical Manufacturing and Testing Technologies: Advanced Optical Manufacturing Technologies; 76550I (2010) https://doi.org/10.1117/12.867896
Event: 5th International Symposium on Advanced Optical Manufacturing and Testing Technologies, 2010, Dalian, China
Abstract
Al-doped ZnO thin film(AZO) has become a type of material which is the first choice to replace the expensive ITO thin film and is the central issue in current research in the field of transparent conductive film because of its properties of high conductivity, high transmittance, low level of pollution, and cheap. In this paper, AZO films were produced by the RF magnetron sputtering under the different growth temperatures condition. The atomic force microscope (AFM), X-ray diffraction (XRD), visible-UV spectrophotometer and the four-point probe (FPP) were used to measure the thin film microstructure, optical properties and electrical characteristics. AFM results show that the film with the smoother surface and the more uniform size distribution grains are obtained by increasing substrate temperature. X-ray diffraction spectra show that with increase of the temperature, the quality of the crystallization of thin films gradually is improved and the the optimum growth temperature is 600 °C. Optical transmission spectra show that the AZO films have high transmittance and band gap of thin films decreases with increasing temperature. The results measured by FPP show that with increase of temperature, sheet resistance decreases.
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Zhou Yang, Hongfang Zheng, Xiaohong Li, Yingcai Peng, Qingxun Zhao, Baoting Liu, "Effect of growth temperature on the properties of Al-doped ZnO thin film prepared by RF magnetron sputtering", Proc. SPIE 7655, 5th International Symposium on Advanced Optical Manufacturing and Testing Technologies: Advanced Optical Manufacturing Technologies, 76550I (6 October 2010); doi: 10.1117/12.867896; https://doi.org/10.1117/12.867896
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