6 October 2010 ELID supported grinding of thin sapphire wafers
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Proceedings Volume 7655, 5th International Symposium on Advanced Optical Manufacturing and Testing Technologies: Advanced Optical Manufacturing Technologies; 76550S (2010) https://doi.org/10.1117/12.865550
Event: 5th International Symposium on Advanced Optical Manufacturing and Testing Technologies, 2010, Dalian, China
Abstract
Sapphire material is, due to its crystal structure, difficult to machine in an economic way. There is a request for thin, i.e. below 0.2 mm thickness, sub surface damage free wafers to produce sensor elements. ELID -- electrolytic in process dressing -- is an innovative high end grinding technology, using small grain sizes, which enable to manufacture surfaces in a quality that is close to polished. ELID grinding requires exactly aligned machining parameters of the grinding process. To grind sapphire the material's behavior is additionally to be considered. Studies on the necessary oxide layer on the grinding wheel and influences on its build-up process will be presented. The presentation shows the results of comparing grinding experiments on different -- c-plane and r-plane -- sapphire materials. Different tool specifications are used. Infeed and grinding velocity are varied and the results on wear, removal rate and surface quality are shown. The process parameters the stiffness of the machine, the grinding forces and pressure are evaluated. The ELID grinding is compared in its results to conventional grinding steps. The material removal rate on sapphire is relatively small due to the extreme hardness of sapphire. The achieved excellent surface roughness will be discussed.
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Igor Makarenko, Igor Makarenko, Christian Vogt, Christian Vogt, Rolf Rascher, Rolf Rascher, Peter Sperber, Peter Sperber, Thomas Stirner, Thomas Stirner, } "ELID supported grinding of thin sapphire wafers", Proc. SPIE 7655, 5th International Symposium on Advanced Optical Manufacturing and Testing Technologies: Advanced Optical Manufacturing Technologies, 76550S (6 October 2010); doi: 10.1117/12.865550; https://doi.org/10.1117/12.865550
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