6 October 2010 Dispersion study on band gap of 1-D lateral restrictions photonic crystal
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Proceedings Volume 7655, 5th International Symposium on Advanced Optical Manufacturing and Testing Technologies: Advanced Optical Manufacturing Technologies; 76551I (2010) https://doi.org/10.1117/12.866637
Event: 5th International Symposium on Advanced Optical Manufacturing and Testing Technologies, 2010, Dalian, China
Abstract
The mode and band gap of electromagnetic wave in lateral restrictions 1-D photonic crystal is studied by the dispersion method. The condition of electromagnetic wave mode is obtained, Take advantage of this condition in conjunction with dispersion method band gap of TE wave and TM wave is calculated. The new band gap structure of flat-panel 1-D photonic crystal is obtained.. For the TE wave: The frequency center forbidden band increases with increase of increment model of quantum number, but decrease with increase of thickness of flat plate; The frequency Width forbidden band increases with increase of increment model of quantum number, but decrease with increase of thickness of flat plate; both the incidence angle center and incidence angle Width of forbidden band increases with increase of increment model of quantum number.
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Hong-xia Dai, Hong-xia Dai, Qi-neng Liu, Qi-neng Liu, } "Dispersion study on band gap of 1-D lateral restrictions photonic crystal", Proc. SPIE 7655, 5th International Symposium on Advanced Optical Manufacturing and Testing Technologies: Advanced Optical Manufacturing Technologies, 76551I (6 October 2010); doi: 10.1117/12.866637; https://doi.org/10.1117/12.866637
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