11 October 2010 Research on third-order susceptibility tensor of silicon at telecom wavelength
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Abstract
In this paper, the electro-induced birefringence based on Kerr effect and Franz-Keldysh effect in bulk silicon crystal at 1.3μm wavelengths has been measured. By using Kerr effect, the third-order susceptibility tensor of bulk crystalline silicon has been calculated.The two independent tensor of silicon X (3) susceptibility can be obtained by calculation (3) 6.22 (1 2.2%) 10 -20 m2 V2 and Xxyxy(3) = and xxxx(3) 9.13 (1 ±2.2%) 10-20 m2 V 2 = m2/V2. The research can drive the silicon utility in the photo-electricity field.
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Yu-Hong Zhang, Hang Liu, Zhan-Guo Chen, Gang Jia, Ce Ren, "Research on third-order susceptibility tensor of silicon at telecom wavelength", Proc. SPIE 7656, 5th International Symposium on Advanced Optical Manufacturing and Testing Technologies: Optical Test and Measurement Technology and Equipment, 765673 (11 October 2010); doi: 10.1117/12.865458; https://doi.org/10.1117/12.865458
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