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22 October 2010 Dependence of silicon thin-film growth characteristics on substrate temperature
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Abstract
Silicon thin-films are fabricated on quartz substrates in the substrate temperature range 500~600 °C by electron-beam evaporation (EBE). Scanning Electron Microscopy (SEM) is employed to characterize the surface morphology of the films and measure the grain size. It is found that, there is an optimum temperature for getting large grain size. The X-ray diffraction (XRD) results show that the preferred crystallographic orientation on quartz wafer is (111). Raman spectra demonstrate the crystallization condition of the films and the crystalline volume fraction are calculated. The results indicate that the growth characteristics of the films depend significantly on the substrate temperature. Silicon thin-films are observed to be amorphous under the temperature of 560 °; above this temperature, they are polycrystalline. In other words, 560 °C is the critical temperature of the films transforming from amorphous silicon to poly-Si. The optimum temperature at about 580 ° for the growth of the film on quartz substrates is obtained. The films exhibit the largest grain size, highest value of crystalline volume fraction and the best structural quality when the substrate is kept at this temperature.
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Longzhi Lin, Haojie Zhang, and Shaoji Jiang "Dependence of silicon thin-film growth characteristics on substrate temperature", Proc. SPIE 7658, 5th International Symposium on Advanced Optical Manufacturing and Testing Technologies: Optoelectronic Materials and Devices for Detector, Imager, Display, and Energy Conversion Technology, 765802 (22 October 2010); https://doi.org/10.1117/12.866389
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