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22 October 2010 Optimizing the growth condition of optoelectronic material (ZnO film) by imaging technology
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Abstract
Using reactive radio-frequency magnetron sputtering technique, ZnO films are grown on Si (111) substrates with ZnO buffer layers deposited under different temperature with optimal condition of working pressure, sputtering power, flux of gas and sputtering time. In order to study the influence of ZnO buffer depositing temperature on the characteristic of the ZnO film, atomic force microscope, X ray diffraction, Raman spectroscopy and photoluminescence spectrum are used to analyze the morphology, growth orientation, Raman spectrum and optical properties of the ZnO films. It is concluded that the optimal depositing temperature of the ZnO buffer for the growth of the top ZnO film is 350 °C.
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Jun Wang, Shi Pan, and Yi Zhang "Optimizing the growth condition of optoelectronic material (ZnO film) by imaging technology", Proc. SPIE 7658, 5th International Symposium on Advanced Optical Manufacturing and Testing Technologies: Optoelectronic Materials and Devices for Detector, Imager, Display, and Energy Conversion Technology, 76580A (22 October 2010); https://doi.org/10.1117/12.866323
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