22 October 2010 Substrate temperature influence on the properties of InGaZnO thin films grown by PLD technique
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In this paper, the effects of substrate temperature during film growth at relative high temperature have been reported. The IGZO thin films were fabricated by means of pulse laser deposition (PLD) with the InGaZnO (In2O3: Ga2O3: ZnO=1: 1: 8 mol %) target. The substrate temperature altered from room temperature (RT) to 800 °C. The product thin films were characterized rigorously by X-ray diffraction (XRD), atomic force microscopy (AFM), UV-VIS spectrometer, Halleffect investigation and X-ray photoelectron spectroscopy (XPS). The IGZO films was with smooth surface, high transmission in the visible spectral range (about 75-92 %), carrier mobility > 8.0 cm2/(V·s) and carrier concentration at about 1018 cm-3. Finally, the character changes influenced by temperature were obtained from analysis results. This task may benefit to a flat panel display in the process of thin film transistors(TFT) fabrications and improvements.
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Jiangbo Chen, Jiangbo Chen, Li Wang, Li Wang, Xiaojing Wan, Xiaojing Wan, Xueqiong Su, Xueqiong Su, Le Kong, Le Kong, "Substrate temperature influence on the properties of InGaZnO thin films grown by PLD technique", Proc. SPIE 7658, 5th International Symposium on Advanced Optical Manufacturing and Testing Technologies: Optoelectronic Materials and Devices for Detector, Imager, Display, and Energy Conversion Technology, 76580E (22 October 2010); doi: 10.1117/12.865692; https://doi.org/10.1117/12.865692

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