22 October 2010 Effect of carrier gases on growth of thick GaN films by hydride vapour phase epitaxy
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Abstract
The effect of carrier gas on thick GaN film grown by hydride vapour phase epitaxy on (0001) sapphire substrate has been studied by double crystal X-ray diffraction (DCXRD), field emission scanning electron microscope (FE-SEM), photoluminescence (PL) and Hall tester. H2, as carrier, is propitious to two-dimension growth pattern of GaN film, but it causes production of more defects and impurities. Red shift of band edge emission of PL and a wider FWHM (full wave at half maximum) of DCXRD appear under H2 atmosphere. N2, as carrier, reduces the content of defects and impurities. However, the growth interface of GaN forms easily crystallographic facets but not epitaxial (0002) plane, which leads to appearing of embossed surface. It may gain high-quality HVPE-GaN that H2 and N2 are adopted as carrier gas sequentially.
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Ru Wang, Ru Wang, Ruixia Yang, Ruixia Yang, Junling Zhang, Junling Zhang, Yongkuan Xu, Yongkuan Xu, Qiang Li, Qiang Li, Wei Wei, Wei Wei, "Effect of carrier gases on growth of thick GaN films by hydride vapour phase epitaxy", Proc. SPIE 7658, 5th International Symposium on Advanced Optical Manufacturing and Testing Technologies: Optoelectronic Materials and Devices for Detector, Imager, Display, and Energy Conversion Technology, 765811 (22 October 2010); doi: 10.1117/12.864775; https://doi.org/10.1117/12.864775
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