Identification of the active photo-excited carrier in reverse biased quantum dot resonant tunneling diode

Wangping Wang; Wenxin Wang; Hong Chen; Junming Zhou; Dayuan Xiong

doi:10.1117/12.866680

22 October 2010 Identification of the active photo-excited carrier in reverse biased quantum dot resonant tunneling diode

Wangping Wang, Wenxin Wang, Hong Chen, Junming Zhou, Dayuan Xiong

Author Affiliations +

Proceedings Volume 7658, 5th International Symposium on Advanced Optical Manufacturing and Testing Technologies: Optoelectronic Materials and Devices for Detector, Imager, Display, and Energy Conversion Technology; 76581C (2010) https://doi.org/10.1117/12.866680
Event: 5th International Symposium on Advanced Optical Manufacturing and Testing Technologies, 2010, Dalian, China

Abstract

The active photo-excited carrier has been identified in reverse biased quantum dot resonant tunneling diode (QDRTD) for light detection. The QD is embedded on the AlAs/GaAs/AlAs double barrier part of the material structure and is found with strong charge memory effect. The QD is charged with electrons in forward bias and the charge storage of QD is maintained well in reverse bias until the voltage of QD resonant tunneling peak. With this charge memory effect, the photo-excited holes are charged into QDs in forward bias and still influence the reverse bias behavior of QDRTD at dark. Compared to the illuminated QDRTD in reverse bias, the active photo-excited carrier of reverse biased QDRTD is unambiguously identified as photo-excited holes. The potential profile of QDRTD structure is also calculated and the potential near charged QDs is found greatly pushed up above GaAs E_C. This may explain the trapping of photo-excited hole by QD for QDRTD in reverse bias.

Citation Download Citation

Wangping Wang, Wenxin Wang, Hong Chen, Junming Zhou, and Dayuan Xiong "Identification of the active photo-excited carrier in reverse biased quantum dot resonant tunneling diode", Proc. SPIE 7658, 5th International Symposium on Advanced Optical Manufacturing and Testing Technologies: Optoelectronic Materials and Devices for Detector, Imager, Display, and Energy Conversion Technology, 76581C (22 October 2010); https://doi.org/10.1117/12.866680

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