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22 October 2010 Systematical investigations of annealing effects on electrical properties and thermal sensitivity characteristics of TiO2-δ thin films by DC reactive magnetron sputtering
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Abstract
In recent years, TiO2-δ thin films as a kind of thermal sensitive material have been attracting more and more attention on the application of infrared devices. In this article, TiO2-δ thin films from the technology of DC reactive magnetron sputtering were deposited on glass substrates under the same sputtering conditions while different annealing conditions. Annealing effects on electrical properties and thermal sensitivity characteristics were systematically investigated under different annealing conditions including annealing circumstance, annealing time and annealing temperature. Results indicated that the sheet resistance (R) and temperature coefficient of resistance (TCR) of TiO2-δ thin films would decrease after vacuum-annealing and would increase after oxygen-annealing. Furthermore, they would increase more and more when the annealing time and the oxygen flux increased during oxygen-annealing. On the contrary, R and TCR would decrease when the annealing temperature went up. Based on that, TiO2-δ thin films could be better applied on related devices under proper technique of annealing.
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Yonglong Qiu, Zhiming Wu, Yongfeng Ju, Jing Jiang, Zhenfei Luo, and MingJun Du "Systematical investigations of annealing effects on electrical properties and thermal sensitivity characteristics of TiO2-δ thin films by DC reactive magnetron sputtering", Proc. SPIE 7658, 5th International Symposium on Advanced Optical Manufacturing and Testing Technologies: Optoelectronic Materials and Devices for Detector, Imager, Display, and Energy Conversion Technology, 76581R (22 October 2010); https://doi.org/10.1117/12.865942
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