22 October 2010 Influences of process parameters of low frequency PECVD technology on intrinsic stress of silicon nitride thin film
Author Affiliations +
Abstract
Silicon nitride (SiNx) thin films were deposited by low frequency (LF) plasma enhanced chemical vapor deposition (PECVD) technology. By systematic variation of the process parameters, e.g. reactive gas flow rate, LF power, chamber gas pressure and substrate temperature. Influences of above parameters on the intrinsic stress of SiNx films were studied and analyzed by combining with the measured refractive index (RI), density, infrared spectra results of deposited SiNx films. The results showed that intrinsic stress of SiNx film was roughly proportional to film density, which was inversely proportional to hydrogen content in the SiNx film. Substrate temperature during deposition was the most important factor affecting hydrogen content in deposited film and, accordingly, the density and intrinsic stress of SiNx film.
© (2010) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Weizhi Li, Weizhi Li, Zhe Kang, Zhe Kang, Yun Ye, Yun Ye, Yadong Jiang, Yadong Jiang, "Influences of process parameters of low frequency PECVD technology on intrinsic stress of silicon nitride thin film", Proc. SPIE 7658, 5th International Symposium on Advanced Optical Manufacturing and Testing Technologies: Optoelectronic Materials and Devices for Detector, Imager, Display, and Energy Conversion Technology, 765824 (22 October 2010); doi: 10.1117/12.867778; https://doi.org/10.1117/12.867778
PROCEEDINGS
7 PAGES


SHARE
Back to Top