22 October 2010 Infrared activity of crystalline silicon and amorphous silicon
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Abstract
The thermo-resistance effect in silicon has been exploited for the fabrication of uncooled infrared detectors. In this paper, based on the Schrodinger equation of material radiation system and the micro-structure of silicon, the infrared absorption theory of silicon is analyzed. The results show that the infrared activity of amorphous silicon is more activate than crystalline silicon because of the fault and long range disorder, and using the impurity B, Li, and H, the infrared activity of silicon also will be activated.
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Shuang Liu, Shuang Liu, Wei Chen, Wei Chen, Jianing Zhang, Jianing Zhang, Wan Zhou, Wan Zhou, Pu Zeng, Pu Zeng, } "Infrared activity of crystalline silicon and amorphous silicon", Proc. SPIE 7658, 5th International Symposium on Advanced Optical Manufacturing and Testing Technologies: Optoelectronic Materials and Devices for Detector, Imager, Display, and Energy Conversion Technology, 765831 (22 October 2010); doi: 10.1117/12.865943; https://doi.org/10.1117/12.865943
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