22 October 2010 Contrast study on GaAs photocathode activation techniques
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Proceedings Volume 7658, 5th International Symposium on Advanced Optical Manufacturing and Testing Technologies: Optoelectronic Materials and Devices for Detector, Imager, Display, and Energy Conversion Technology; 765840 (2010); doi: 10.1117/12.864161
Event: 5th International Symposium on Advanced Optical Manufacturing and Testing Technologies, 2010, Dalian, China
Abstract
At present, two kinds of activation techniques for preparing GaAs NEA photocathode are available. In this paper, according to two kinds of photocurrent curve arising in the activation, the characteristic and mechanism of the two kinds of craft were summed up and compared with each other, and the further theoretical investigation on the mechanism of activation was carried out based on the recent research of NEA surface model for GaAs photocathode. It is proposed as a process principle that during (Cs, O) alternation phase of the activation process of GaAs photocathode, Cs should always be in excessive state. Besides, it is also indicated that whether Cs is excessive during (Cs, O) alternation phase and the Cs/O ratio may affect directly the final property of photocathode. Finally, a method to modify the craft parameters to guard against the deviation from the principle is presented. The presented study is very necessary and significative for optimizing the activation techniques so as to enhance the performances of GaAs NEA photocathodes.
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Jun Niu, Yijun Zhang, Benkang Chang, Zhi Yang, Yajuan Xiong, "Contrast study on GaAs photocathode activation techniques", Proc. SPIE 7658, 5th International Symposium on Advanced Optical Manufacturing and Testing Technologies: Optoelectronic Materials and Devices for Detector, Imager, Display, and Energy Conversion Technology, 765840 (22 October 2010); doi: 10.1117/12.864161; https://doi.org/10.1117/12.864161
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KEYWORDS
Cesium

Oxygen

Gallium arsenide

Chemical species

Adsorption

Process modeling

Astatine

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