Translator Disclaimer
22 October 2010 Photoluminescence of Mn+ doped GaAs
Author Affiliations +
Abstract
Photoluminescence is one of the most useful techniques to obtain information about optoelectronic properties and defect structures of materials. In this work, the room-temperature and low temperature photoluminescence of Mn-doped GaAs were investigated, respectively. Mn-doped GaAs structure materials were prepared by Mn+ ion implantation at room temperature into GaAs. The implanted samples were subsequently annealed at various temperatures under N2 atmosphere to recrystallize the samples and remove implant damage. A strong peak was found for the sample annealed at 950 °C for 5 s. Transitions near 0.989 eV (1254 nm), 1.155 eV (1074 nm) and 1.329 eV (933 nm) were identified and formation of these emissions was analyzed for all prepared samples. This structure material could have myriad applications, including information storage, magnet-optical properties and energy level engineering.
© (2010) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Huiying Zhou, Shengchun Qu, Shuzhi Liao, Fasheng Zhang, Junpeng Liu, and Zhanguo Wang "Photoluminescence of Mn+ doped GaAs", Proc. SPIE 7658, 5th International Symposium on Advanced Optical Manufacturing and Testing Technologies: Optoelectronic Materials and Devices for Detector, Imager, Display, and Energy Conversion Technology, 765846 (22 October 2010); https://doi.org/10.1117/12.866642
PROCEEDINGS
5 PAGES


SHARE
Advertisement
Advertisement
Back to Top