22 October 2010 A back-illuminated heterojunctions ultraviolet photodetector based on ZnO film
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Abstract
In this paper, we present the investigation of a back-illuminated heterojunctions ultraviolet detector, which were fabricated by depositing Ag-doped ZnO based (ZnO-TiO2) thin film on transparent conductive layer of ITO coated quartz substrate though the reactive radio-frequency (RF) magnetron sputtering at higher oxygen pressure. The p-n junction characteristic is confirmed by current-voltage (I-V) measurements. The turn-on voltage was 6 V, with a low leakage current under reverse bias (-5 V), corresponding values was just 0.2 nA . It is clearly showed the rectifying characteristics of typical p-n junction's rectifier behaviors. The structural, component and UV (365 nm, 1400 μW/cm2) photoresponse properties were explored by X-ray diffraction (XRD), Scanning Electron Microscope (SEM), X-ray energy dispersive spectrometer (EDS) and Tektronix oscilloscope. The results showed that: Ag in substitution form in the ZnO lattice, Ag doping concentration is low, the sample is highly c-axis preferred orientation, With the increase in doped Ag volume, ZnO film of 002 peaks no longer appear. The surface of the Ag doped ZnO based film exhibits a smooth surface and very dense structure, no visible pores and defects over the film were observed.The ultraviolet response time measurements showed rise and fall time are several seconds Level.
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Xiandong Jiang, Dawei Li, Wenjun Yang, Jiming Wang, Xu Lin, Ziqiang Huang, "A back-illuminated heterojunctions ultraviolet photodetector based on ZnO film", Proc. SPIE 7658, 5th International Symposium on Advanced Optical Manufacturing and Testing Technologies: Optoelectronic Materials and Devices for Detector, Imager, Display, and Energy Conversion Technology, 76584M (22 October 2010); doi: 10.1117/12.867893; https://doi.org/10.1117/12.867893
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