4 May 2010 Low-Light-Level InGaAs focal plane arrays with and without illumination
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Proceedings Volume 7660, Infrared Technology and Applications XXXVI; 76600K (2010); doi: 10.1117/12.852605
Event: SPIE Defense, Security, and Sensing, 2010, Orlando, Florida, United States
Abstract
Short wavelength IR imaging using InGaAs-based FPAs is shown. Aerius demonstrates low dark current in InGaAs detector arrays with 15 μm pixel pitch. The same material is mated with a 640x 512 CTIA-based readout integrated circuit. The resulting FPA is capable of imaging photon fluxes with wavelengths between 1 and 1.6 microns at low light levels. The mean dark current density on the FPAs is extremely low at 0.64 nA/cm2 at 10°C. Noise due to the readout can be reduced from 95 to 57 electrons by using off-chip correlated double sampling (CDS). In addition, Aerius has developed laser arrays that provide flat illumination in scenes that are normally light-starved. The illuminators have 40% wall-plug efficiency and provide speckle-free illumination, provide artifact-free imagery versus conventional laser illuminators.
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Michael MacDougal, Jon Geske, Chad Wang, David Follman, "Low-Light-Level InGaAs focal plane arrays with and without illumination", Proc. SPIE 7660, Infrared Technology and Applications XXXVI, 76600K (4 May 2010); doi: 10.1117/12.852605; https://doi.org/10.1117/12.852605
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KEYWORDS
Staring arrays

Fiber optic illuminators

Cadmium sulfide

Electrons

Indium gallium arsenide

Readout integrated circuits

Sensors

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