3 May 2010 Development of low dark current SiGe-detector arrays for visible-NIR imaging sensor
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Abstract
SiGe based focal plane arrays offer a low cost alternative for developing visible- near-infrared focal plane arrays that will cover the spectral band from 0.4 to 1.6 microns. The attractive features of SiGe based foal plane arrays take advantage of silicon based technology that promises small feature size, low dark current and compatibility with the low power silicon CMOS circuits for signal processing. This paper will discuss performance characteristics for the SiGe based VIS-NIR Sensors for a variety of defense and commercial applications using small unit cell size and compare performance with InGaAs, InSb, and HgCdTe IRFPA's. We will present results on the approach and device design for reducing the dark current in SiGe detector arrays. We will discuss electrical and optical properties of SiGe arrays at room temperature and as a function of temperature. We will also discuss future integration path for SiGe devices with Si-MEMS Bolometers.
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Ashok K. Sood, Robert A. Richwine, Yash R. Puri, Nicole DiLello, Judy L. Hoyt, Tayo I. Akinwande, Nibir Dhar, Stuart Horn, Raymond S. Balcerak, Thomas G. Bramhall, "Development of low dark current SiGe-detector arrays for visible-NIR imaging sensor", Proc. SPIE 7660, Infrared Technology and Applications XXXVI, 76600L (3 May 2010); doi: 10.1117/12.852682; https://doi.org/10.1117/12.852682
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