3 May 2010 High performance CMOS image sensor for digitally fused day/night vision systems
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Abstract
We present the performance of a CMOS image sensor optimized for next generation fused day/night vision systems. The device features 5T pixels with pinned photodiodes on a 6.5μm pitch with integrated micro-lens. The 5T pixel architecture enables both correlated double sampling (CDS) to reduce noise for night time operation, and a lateral antiblooming drain for day time operation. The measured peak quantum efficiency of the sensor is above 55% at 600nm, and the median read noise is less than 1e- RMS at room temperature. The sensor features dual gain 11-bit data output ports and supports 30 fps and 60 fps. The full well capacity is greater than 30ke-, the dark current is less than 3.8pA/cm2 at 20ºC, and the MTF at 77 lp/mm is 0.4 at 550nm. The sensor also achieves an intra-scene linear dynamic range of greater than 90dB (30000:1) for night time operation, and an inter-scene linear dynamic range of greater than 150dB for complete day/night operability.
© (2010) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Boyd Fowler, Paul Vu, Chiao Liu, Steve Mims, Hung Do, Wang Li, Jeff Appelbaum, "High performance CMOS image sensor for digitally fused day/night vision systems", Proc. SPIE 7660, Infrared Technology and Applications XXXVI, 76600O (3 May 2010); doi: 10.1117/12.849848; https://doi.org/10.1117/12.849848
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