4 May 2010 High performance CMOS image sensor for digitally fused day/night vision systems
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Proceedings Volume 7660, Infrared Technology and Applications XXXVI; 76600O (2010); doi: 10.1117/12.849848
Event: SPIE Defense, Security, and Sensing, 2010, Orlando, Florida, United States
Abstract
We present the performance of a CMOS image sensor optimized for next generation fused day/night vision systems. The device features 5T pixels with pinned photodiodes on a 6.5μm pitch with integrated micro-lens. The 5T pixel architecture enables both correlated double sampling (CDS) to reduce noise for night time operation, and a lateral antiblooming drain for day time operation. The measured peak quantum efficiency of the sensor is above 55% at 600nm, and the median read noise is less than 1e- RMS at room temperature. The sensor features dual gain 11-bit data output ports and supports 30 fps and 60 fps. The full well capacity is greater than 30ke-, the dark current is less than 3.8pA/cm2 at 20ºC, and the MTF at 77 lp/mm is 0.4 at 550nm. The sensor also achieves an intra-scene linear dynamic range of greater than 90dB (30000:1) for night time operation, and an inter-scene linear dynamic range of greater than 150dB for complete day/night operability.
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Boyd Fowler, Paul Vu, Chiao Liu, Steve Mims, Hung Do, Wang Li, Jeff Appelbaum, "High performance CMOS image sensor for digitally fused day/night vision systems", Proc. SPIE 7660, Infrared Technology and Applications XXXVI, 76600O (4 May 2010); doi: 10.1117/12.849848; https://doi.org/10.1117/12.849848
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KEYWORDS
Sensors

CMOS sensors

Modulation transfer functions

Camera shutters

Quantum efficiency

Diffusion

Amplifiers

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