3 May 2010 SWIR HgCdTe HDVIP detectors MTF Monte Carlo modeling and data
Author Affiliations +
Abstract
The photocurrent of High Density Vertically Integrated Photodiodes (HDVIP) manufactured in LPE grown SWIR (λc ~ 2.5 μm) HgCdTe material is modeled as a function of incident spot location using a Monte Carlo diffusion calculation in the p-type bulk. The Monte Carlo calculation assumes a 3 x 3 mini-array of detectors surrounded by guard detectors. Carriers generated in the n-regions are always collected. The result is a responsivity map that yields the individual detector "spot scan" profile that is then used to calculate the detector modulation transfer function (MTF). Fourier transforms of detector "spot scan" response profile provided experimental confirmation of MTF that corresponded to the Monte Carlo modeled MTF.
© (2010) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
A. I. D'Souza, M. G. Stapelbroek, C. Yoneyama, P. Ely, M. R. Skokan, H. D. Shih, "SWIR HgCdTe HDVIP detectors MTF Monte Carlo modeling and data", Proc. SPIE 7660, Infrared Technology and Applications XXXVI, 76600Q (3 May 2010); doi: 10.1117/12.849554; https://doi.org/10.1117/12.849554
PROCEEDINGS
6 PAGES


SHARE
Back to Top