4 May 2010 Design and performance of PIR security sensors using 10 to 25-μm microbolometer technology
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Proceedings Volume 7660, Infrared Technology and Applications XXXVI; 766010 (2010); doi: 10.1117/12.851136
Event: SPIE Defense, Security, and Sensing, 2010, Orlando, Florida, United States
Abstract
Previous reports to this SPIE forum have described a new generation of passive infrared (PIR) security sensors based on silicon microbolometer MOEMS technology. The technology is now patented and under development for commercial exploitation. This paper extends the PIR sensor analysis to smaller microbolometer size. This has been motivated by the availability of MEMS foundries offering high resolution lithography, hence smaller feature size. The performance of sensors with 10 and 25μm microbolometer size is given and compared with previous results. The flexibility of the technology to meet different applications is discussed.
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Kevin C. Liddiard, "Design and performance of PIR security sensors using 10 to 25-μm microbolometer technology", Proc. SPIE 7660, Infrared Technology and Applications XXXVI, 766010 (4 May 2010); doi: 10.1117/12.851136; https://doi.org/10.1117/12.851136
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KEYWORDS
Sensors

Microbolometers

Bolometers

Staring arrays

Infrared sensors

Optical sensors

Silicon

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