3 May 2010 SLS technology: the FPA perspective
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We present the performance of longwave infrared focal plane arrays (FPAs) made from Type-II InAs/GaSb strained layer superlattice (SLS) photodiodes. In 320x256 FPAs operating at 77K, we measure cutoff wavelength ~ 8.5 μm, dark current density ~ 10-5 A/cm2, quantum efficiency > 5% (with 2 μm -thick absorber photodiode), and pixel operability ~ 96%. Device physics and FPA performance are graphed. Current challenges are discussed.
© (2010) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Mani Sundaram, Mani Sundaram, Axel Reisinger, Axel Reisinger, Richard Dennis, Richard Dennis, Kelly Patnaude, Kelly Patnaude, Douglas Burrows, Douglas Burrows, Jason Bundas, Jason Bundas, Kim Beech, Kim Beech, Ross Faska, Ross Faska, } "SLS technology: the FPA perspective", Proc. SPIE 7660, Infrared Technology and Applications XXXVI, 76601P (3 May 2010); doi: 10.1117/12.853662; https://doi.org/10.1117/12.853662

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