3 May 2010 SLS technology: the FPA perspective
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Abstract
We present the performance of longwave infrared focal plane arrays (FPAs) made from Type-II InAs/GaSb strained layer superlattice (SLS) photodiodes. In 320x256 FPAs operating at 77K, we measure cutoff wavelength ~ 8.5 μm, dark current density ~ 10-5 A/cm2, quantum efficiency > 5% (with 2 μm -thick absorber photodiode), and pixel operability ~ 96%. Device physics and FPA performance are graphed. Current challenges are discussed.
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Mani Sundaram, Axel Reisinger, Richard Dennis, Kelly Patnaude, Douglas Burrows, Jason Bundas, Kim Beech, Ross Faska, "SLS technology: the FPA perspective", Proc. SPIE 7660, Infrared Technology and Applications XXXVI, 76601P (3 May 2010); doi: 10.1117/12.853662; https://doi.org/10.1117/12.853662
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