During the last 15 years, the Spanish MoD laboratories (CIDA) have developed the VPD PbSe technology (Vapor Phase
Deposited). The excellent properties of the material (sensitivity in the MWIR band, high performance in uncooled
operation, and photodetector), together with a new method of processing the material based on PbSe deposition by phase
vapor, which is fully compatible with Si-CMOS technology, have opened tremendous perspectives with multiple
applications for the detector where fast responses and low cost are main requirements.
In 2008 the VPD manufacturing technology was transferred to New Infrared Technologies, S.L. (NIT) This paper shows
the actual situation of the technology, describing the last advances reached with the new 32x32 uncooled imager, able to
provide frame rates above 1,000 fps. The work also describes the industrial strategy adopted for bringing the technology
towards the industrialization and the roadmap of the technology from the point of view of future devices and systems.