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3 May 2010 Advances in dual-band IRFPAs made from HgCdTe grown by MOVPE
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Abstract
This paper describes progress in the development of dual-band (MW / LW) infrared detectors made from HgCdTe grown by Metal-Organic Vapor Phase Epitaxy. The technologies of LW and MW single band detectors, which feed into dualband capability, are discussed. The performance of single-band detectors is detailed to give an indication of the quality that can be achieved through MOVPE processes. For single-band detectors, pixel resolution has reached 1024 x 786, while pixel pitch has been reduced to 16μm. Operability for single-band detectors has exceeded 99.98% in both bands. Full-TV (640 x 512 pixels) dual-band arrays on 24μm and 20μm pitches have been developed. MW median NETD values achieved are 10mK and 14mK for the 24μm and 20μm pitch arrays respectively. The corresponding LW median NETD values are 23mK and 27mK respectively.
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P. Abbott, L. Pillans, P. Knowles, and R. K. McEwen "Advances in dual-band IRFPAs made from HgCdTe grown by MOVPE", Proc. SPIE 7660, Infrared Technology and Applications XXXVI, 766035 (3 May 2010); https://doi.org/10.1117/12.850099
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