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3 May 2010 High-gain high-sensitivity resonant Ge/Si APD photodetectors
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In this paper we present a separate-absorption-charge-multiplication Ge/Si avalanche photodiode, which has a high gain-bandwidth product (e.g., >860GHz at a wavelength of 1310nm). Such a high gain-bandwidth product is attributed to the peak enhancement of the frequency response at the high frequency range. From a small signal analysis, we establish an equivalent circuit model which includes a capacitance parallel connected with an inductance due to the avalanche process. When the APD operates at high bias voltages, the LC circuit provides a resonance in the avalanche, which introduces a peak enhancement.
© (2010) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
John E. Bowers, Daoxin Dai, Yimin Kang, and Mike Morse "High-gain high-sensitivity resonant Ge/Si APD photodetectors", Proc. SPIE 7660, Infrared Technology and Applications XXXVI, 76603H (3 May 2010);


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