Translator Disclaimer
3 May 2010 High-gain high-sensitivity resonant Ge/Si APD photodetectors
Author Affiliations +
Abstract
In this paper we present a separate-absorption-charge-multiplication Ge/Si avalanche photodiode, which has a high gain-bandwidth product (e.g., >860GHz at a wavelength of 1310nm). Such a high gain-bandwidth product is attributed to the peak enhancement of the frequency response at the high frequency range. From a small signal analysis, we establish an equivalent circuit model which includes a capacitance parallel connected with an inductance due to the avalanche process. When the APD operates at high bias voltages, the LC circuit provides a resonance in the avalanche, which introduces a peak enhancement.
© (2010) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
John E. Bowers, Daoxin Dai, Yimin Kang, and Mike Morse "High-gain high-sensitivity resonant Ge/Si APD photodetectors", Proc. SPIE 7660, Infrared Technology and Applications XXXVI, 76603H (3 May 2010); https://doi.org/10.1117/12.855030
PROCEEDINGS
8 PAGES


SHARE
Advertisement
Advertisement
RELATED CONTENT

Progress toward competitive Ge/Si photodetectors
Proceedings of SPIE (May 01 2008)
Single Photon Counters For The Infrared
Proceedings of SPIE (November 16 1982)
Development of low excess noise SWIR APDs
Proceedings of SPIE (May 31 2012)
High-density avalanche photodiode array
Proceedings of SPIE (October 15 1993)

Back to Top