C-QWIPs for far infrared detection

K. K. Choi; M. D. Jhabvala; D. P. Forrai; J. Sun; D. Endres

doi:10.1117/12.849715

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3 May 2010 C-QWIPs for far infrared detection

K. K. Choi, M. D. Jhabvala, D. P. Forrai, J. Sun, D. Endres

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Proceedings Volume 7660, Infrared Technology and Applications XXXVI; 76603K (2010) https://doi.org/10.1117/12.849715
Event: SPIE Defense, Security, and Sensing, 2010, Orlando, Florida, United States

Abstract

We have extended our investigation of corrugated quantum well infrared photodetector focal plane arrays (C-QWIP FPAs) into the far infrared regime. Specifically, we are developing the detectors for the Thermal Infrared Sensor (TIRS) used in the Landsat Data Continuity Mission. This mission requires infrared detection cutoff at 12.5 μm and FPAs operated at 43 K. To maintain a low dark current in these extended wavelengths, we adopted a low doping density of 0.6 × 10¹⁸ cm^-3 and a bound-to-bound state detector in one of the designs. The internal absorption QE is calculated to be 25.4% for a pixel pitch of 25 microns and 60 periods of QWs. With a pixel fill factor of 80% and a substrate transmission of 70.9%, the external QE is 14.4%. To yield the theoretical conversion efficiency CE, the photoconductive gain was measured and is 0.25 at 5 V, from which CE is predicted to be 3.6%. This value is in agreement with the 3.5% from the FPA measurement. Meanwhile, the dark current is measured to be 2.1 × 10^-6 A/cm² at 43 K. For regular infrared imaging above 8 μm, the FPA will have an NETD of 16 mK at 2 ms integration time in the presence of 260 read noise electrons, and it increases to 22 mK at 51 K. The highest operability of the tested FPAs is 99.967%. With the CE agreement, we project the FPA performance in the far infrared regime up to 30 μm cutoff.

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K. K. Choi, M. D. Jhabvala, D. P. Forrai, J. Sun, and D. Endres "C-QWIPs for far infrared detection", Proc. SPIE 7660, Infrared Technology and Applications XXXVI, 76603K (3 May 2010); https://doi.org/10.1117/12.849715

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