Design and characterization of strain-compensated InGaAs/GaAsSb type-II MQW structure with operation wavelength at ~3&#956;m

W. Y. Jiang; Baile Chen; Jinrong Yuan; A. L. Holmes Jr.

doi:10.1117/12.849562

3 May 2010 Design and characterization of strain-compensated InGaAs/GaAsSb type-II MQW structure with operation wavelength at ~3μm

W. Y. Jiang, Baile Chen, Jinrong Yuan, A. L. Holmes Jr.

Author Affiliations +

Proceedings Volume 7660, Infrared Technology and Applications XXXVI; 76603O (2010) https://doi.org/10.1117/12.849562
Event: SPIE Defense, Security, and Sensing, 2010, Orlando, Florida, United States

Abstract

GaInAs/GaAsSb type-II multiple quantum wells (MQWs) grown on InP substrates by molecular beam epitaxy (MBE) were investigated for potential use in p-i-n photodiodes operating in the mid-infrared spectral region. In these quantum well structures, electrons and holes are spatially separated. The resulting spatially indirect type-II detection occurs at longer wavelength than the spatially direct intraband recombination in either GaInAs or GaAsSb. A 4-band k · p Hamiltonian model was employed to calculate the detection wavelengths and wavefunction overlaps. A p-i-n structure with 100 pairs of Ga_0.66In₀₃₄As (~7.0 nm)/GaAs_0.25Sb_0.75 (~5.0 nm) MQWs structure with operation wavelength of above 3.0 μm was designed and grown by MBE. The compressively strained GaAsSb layers are strain-compensated by tensile strained GaInAs. Photo response of above 3 μm was observed by room temperature responsivity measurements.

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W. Y. Jiang, Baile Chen, Jinrong Yuan, and A. L. Holmes Jr. "Design and characterization of strain-compensated InGaAs/GaAsSb type-II MQW structure with operation wavelength at ~3μm", Proc. SPIE 7660, Infrared Technology and Applications XXXVI, 76603O (3 May 2010); https://doi.org/10.1117/12.849562

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