There exists a wealth of information in the scientific literature on the physical properties and device characterization
procedures for complementary metal oxide semiconductor (CMOS), charge coupled device (CCD) and avalanche
photodiode (APD) format detectors. Numerous papers and books have also treated photocathode operation in the
context of photomultiplier tube (PMT) operation for either non imaging applications or limited night vision capability.
However, much less information has been reported in the literature about the characterization procedures and properties
of photocathode detectors with novel cross delay line (XDL) anode structures. These allow one to detect single photons
and create images by recording space and time coordinate (X, Y & T) information. In this paper, we report on the
physical characteristics and performance of a cross delay line anode sensor with an enhanced near infrared wavelength
response photocathode and high dynamic range micro channel plate (MCP) gain (> 106 ) multiplier stage. Measurement
procedures and results including the device dark event rate (DER), pulse height distribution, quantum and electronic
device efficiency (QE & DQE) and spatial resolution per effective pixel region in a 25 mm sensor array are presented.
The overall knowledge and information obtained from XDL sensor characterization allow us to optimize device
performance and assess capability. These device performance properties and capabilities make XDL detectors ideal for
remote sensing field applications that require single photon detection, imaging, sub nano-second timing response, high
spatial resolution (10's of microns) and large effective image format.ÿ