23 April 2010 Floating gate based ultra-high-sensitivity two-terminal AlGaN/GaN HEMT hydrogen sensor
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Abstract
This paper presents the analytical performances of an AlGaN/GaN High Electron Mobility Transistor (HEMT) based sensor for the detection of H2 gas. The model calculates the changes in drain-to-source current and sensitivity of the device due to adsorbed atomic density of gas at the gate terminal. Simulated results indicate that AlGaN/GaN HEMT based floating gate sensors are highly suitable for the extreme environment detection of various gases with concentration as low as ~ ppb level.
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Sazia A. Eliza, Achyut K. Dutta, "Floating gate based ultra-high-sensitivity two-terminal AlGaN/GaN HEMT hydrogen sensor", Proc. SPIE 7673, Advanced Environmental, Chemical, and Biological Sensing Technologies VII, 76730A (23 April 2010); doi: 10.1117/12.851536; https://doi.org/10.1117/12.851536
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