5 May 2010 Nanocrystalline ZnO microwave thin film transistors
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Abstract
Nanocrystalline ZnO films prepared by Pulsed Laser Deposition were used to fabricate the first thin film transistors that operate at microwave frequencies. Unlike more conventional amorphous Si and organic thin film transistors, which are only suitable for low speed applications, ZnO-based thin film transistors exhibit figure-of-merit device numbers that are comparable to single crystal transistors. These include on/off ratio of 1012, current density of >400mA/mm and field effect mobility of 110 cm2/V.s. Parameters, including film growth temperature, gate insulators, and device layout designs were examined in detail to maximize performance. We have achieved current gain cut-off frequency, fT, and power gain cut-off frequency, fmax, values of 2.9GHz and 10GHz, respectively with 1.2μm gate length devices demonstrating that ZnO-based TFTs are suitable for microwave applications.
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Burhan Bayraktaroglu, Kevin Leedy, Robert Neidhard, "Nanocrystalline ZnO microwave thin film transistors", Proc. SPIE 7679, Micro- and Nanotechnology Sensors, Systems, and Applications II, 767904 (5 May 2010); doi: 10.1117/12.849666; https://doi.org/10.1117/12.849666
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