Paper
5 May 2010 AlGaN/GaN high-electron mobility transistor-based sensors for environmental and bio-applications
B. H. Chu, Y. L. Wang, K. H. Chen, C. Y. Chang, C. F. Lo, S. J. Pearton, G. Papadi, J. K. Coleman, B. J. Sheppard, C. F. Dungen, Kevin Kroll, Nancy Denslow, A. Dabiran, P. P. Chow, J. W. Johnson, E. L. Pine, K. J. Linthicum, F. Ren
Author Affiliations +
Abstract
A promising sensing technology utilizing AlGaN/GaN high electron mobility transistors (HEMTs) has been developed to analyze a wide variety of environmental and biological gases and liquids. The conducting 2DEG channel of GaN/AlGaN HEMTs is very close to the surface and extremely sensitive to adsorption of analytes. Examples of detecting mercury ions, perkinsus, lactic acid, carbon dioxide, and vitellogenin are discussed in this paper.
© (2010) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
B. H. Chu, Y. L. Wang, K. H. Chen, C. Y. Chang, C. F. Lo, S. J. Pearton, G. Papadi, J. K. Coleman, B. J. Sheppard, C. F. Dungen, Kevin Kroll, Nancy Denslow, A. Dabiran, P. P. Chow, J. W. Johnson, E. L. Pine, K. J. Linthicum, and F. Ren "AlGaN/GaN high-electron mobility transistor-based sensors for environmental and bio-applications", Proc. SPIE 7679, Micro- and Nanotechnology Sensors, Systems, and Applications II, 76790Q (5 May 2010); https://doi.org/10.1117/12.844995
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KEYWORDS
Sensors

Field effect transistors

Ions

Mercury

Carbon dioxide

Zinc oxide

Environmental sensing

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