5 May 2010 GaN-based high-temperature and radiation-hard electronics for harsh environments
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Abstract
We develop novel GaN-based high temperature and radiation-hard electronics to realize data acquisition electronics and transmitters suitable for operations in harsh planetary environments. In this paper, we discuss our research on AlGaN/GaN metal-oxide-semiconductor (MOS) transistors that are targeted for 500 °C operation and >2 Mrad radiation hardness. For the target device performance, we develop Schottky-free AlGaN/GaN MOS transistors, where a gate electrode is processed in a MOS layout using an Al2O3 gate dielectric layer. The AlGaN/GaN MOS transistors fabricated with the wide-bandgap gate oxide layer enable Schottky-free gate electrodes, resulting in a much reduced gate leakage current and an improved sub-threshold current than the current AlGaN/GaN field effect transistors. In this study, characterization of our AlGaN/GaN MOS transistors is carried out over the temperature range of 25°C to 500°C. The Ids- Vgs and Ids-Vds curves measured as a function of temperature show an excellent pinch-off behavior up to 450°C. Off-state degradation is not observed up to 400 °C, but it becomes measurable at 450 °C. The off-state current is increased at 500 °C due to the gate leakage current, and the AlGaN/GaN MOS HEMT does not get pinched-off completely. Radiation hardness testing of the AlGaN/GaN MOS transistors is performed using a 50 MeV 60Co gamma source to explore effects of TID (total ion dose). Excellent Ids-Vgs and Ids-Vds characteristics are measured even after exposures to a TID of 2Mrad. A slight decrease of saturation current (ΔIdss~3 mA/mm) is observed due to the 2Mrad irradiation.
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Kyung-Ah Son, Kyung-Ah Son, Anna Liao, Anna Liao, Gerald Lung, Gerald Lung, Manuel Gallegos, Manuel Gallegos, Toshiro Hatake, Toshiro Hatake, Richard D. Harris, Richard D. Harris, Leif Z. Scheick, Leif Z. Scheick, William D. Smythe, William D. Smythe, } "GaN-based high-temperature and radiation-hard electronics for harsh environments", Proc. SPIE 7679, Micro- and Nanotechnology Sensors, Systems, and Applications II, 76790U (5 May 2010); doi: 10.1117/12.852711; https://doi.org/10.1117/12.852711
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