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28 April 2010 Hybridization process for back-illuminated silicon Geiger-mode avalanche photodiode arrays
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Abstract
We present a unique hybridization process that permits high-performance back-illuminated silicon Geiger-mode avalanche photodiodes (GM-APDs) to be bonded to custom CMOS readout integrated circuits (ROICs) - a hybridization approach that enables independent optimization of the GM-APD arrays and the ROICs. The process includes oxide bonding of silicon GM-APD arrays to a transparent support substrate followed by indium bump bonding of this layer to a signal-processing ROIC. This hybrid detector approach can be used to fabricate imagers with high-fill-factor pixels and enhanced quantum efficiency in the near infrared as well as large-pixel-count, small-pixel-pitch arrays with pixel-level signal processing. In addition, the oxide bonding is compatible with high-temperature processing steps that can be used to lower dark current and improve optical response in the ultraviolet.
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Daniel R. Schuette, Richard C. Westhoff, Andrew H. Loomis, Douglas J. Young, Joseph S. Ciampi, Brian F. Aull, and Robert K. Reich "Hybridization process for back-illuminated silicon Geiger-mode avalanche photodiode arrays", Proc. SPIE 7681, Advanced Photon Counting Techniques IV, 76810P (28 April 2010); https://doi.org/10.1117/12.849356
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