29 April 2010 High-performance InGaAs/InP-based single-photon avalanche diode with reduced afterpulsing
Author Affiliations +
Abstract
We report reduced afterpulsing for a high-performance InGaAs/InP single photon avalanche photodiode (SPAD) using a gated-mode passive quenching with active reset (gated-PQAR) circuit. Photon detection efficiency (PDE) and dark count probability (DCP) were measured at a gate repetition rate of 1 MHz. With a double-pulse measurement technique, the afterpulsing probability was measured for various hold-off times. At 230K, 0.3% afterpulsing probability for a 10 ns hold-off time was achieved with 13% PDE, 2×10-6 DCP and 0.4 ns effective gate width. For the same hold off time, 30% PDE and 1×10-5 DCP was achieved with 6% afterpulsing probability for an effective gate width of 0.7 ns.
© (2010) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Chong Hu, Chong Hu, Xiaoguang Zheng, Xiaoguang Zheng, Joe C. Campbell, Joe C. Campbell, Bora M. Onat, Bora M. Onat, Xudong Jiang, Xudong Jiang, Mark A. Itzler, Mark A. Itzler, "High-performance InGaAs/InP-based single-photon avalanche diode with reduced afterpulsing", Proc. SPIE 7681, Advanced Photon Counting Techniques IV, 76810S (29 April 2010); doi: 10.1117/12.851356; https://doi.org/10.1117/12.851356
PROCEEDINGS
7 PAGES


SHARE
Back to Top