28 April 2010 High-efficiency InN-based quantum dot solar cells for defense applications
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Nitride semiconductors possess a number of unique material properties applicable to energy harvesting photovoltaic devices, including a large range of energy gaps, superior radiation resistance, and tolerance to high temperatures. We present here our experimental results related to the self-assembled InN quantum dots formed on Si substrates. We have been successful at synthesizing InN quantum dots using the metal-organic chemical vapor deposition (MOCVD) process. We demonstrate the synthesis of a high density of InN dots exhibiting excellent structural and optical properties. An unprecedented range of absorption energies, ranging from the infrared to the ultraviolet, can be obtained by embedding InN-based quantum dots in a wide band gap GaN barrier. The combination of energy-gaps accessible to III-V nitride materials may be used to reap the benefits of advance quantum dot device concepts involving hot carrier effects or multiple carrier generation processes.
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Roger E. Welser, Ashok K. Sood, Yash R. Puri, Oleg A. Laboutin, Louis J. Guido, Nibir K. Dhar, Priyalal S. Wijewarnasuriya, "High-efficiency InN-based quantum dot solar cells for defense applications", Proc. SPIE 7683, Energy Harvesting and Storage: Materials, Devices, and Applications, 76830R (28 April 2010); doi: 10.1117/12.852764; https://doi.org/10.1117/12.852764


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