28 April 2010 High-efficiency InN-based quantum dot solar cells for defense applications
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Abstract
Nitride semiconductors possess a number of unique material properties applicable to energy harvesting photovoltaic devices, including a large range of energy gaps, superior radiation resistance, and tolerance to high temperatures. We present here our experimental results related to the self-assembled InN quantum dots formed on Si substrates. We have been successful at synthesizing InN quantum dots using the metal-organic chemical vapor deposition (MOCVD) process. We demonstrate the synthesis of a high density of InN dots exhibiting excellent structural and optical properties. An unprecedented range of absorption energies, ranging from the infrared to the ultraviolet, can be obtained by embedding InN-based quantum dots in a wide band gap GaN barrier. The combination of energy-gaps accessible to III-V nitride materials may be used to reap the benefits of advance quantum dot device concepts involving hot carrier effects or multiple carrier generation processes.
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Roger E. Welser, Roger E. Welser, Ashok K. Sood, Ashok K. Sood, Yash R. Puri, Yash R. Puri, Oleg A. Laboutin, Oleg A. Laboutin, Louis J. Guido, Louis J. Guido, Nibir K. Dhar, Nibir K. Dhar, Priyalal S. Wijewarnasuriya, Priyalal S. Wijewarnasuriya, } "High-efficiency InN-based quantum dot solar cells for defense applications", Proc. SPIE 7683, Energy Harvesting and Storage: Materials, Devices, and Applications, 76830R (28 April 2010); doi: 10.1117/12.852764; https://doi.org/10.1117/12.852764
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