4 May 2010 State-of-the-art continuous-wave InGaN laser diodes in the violet, blue, and green wavelength regimes
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Abstract
We present state-of-the-art performance from green, blue, and violet InGaN-based laser diodes fabricated on nonpolar and semipolar GaN substrates. Using these novel crystal orientations, we demonstrate high power, high efficiency, continuous-wave operation from single-lateral-mode electrically pumped laser diodes at wavelengths from 405 nm to 500 nm. Additionally, we present the longest reported continuous-wave lasing demonstration of 525 nm and an output power of over 9 mW at 521 nm. Wall-plug efficiencies of over 25% in the violet region, 17.5% in the blue region, over 5% at 472nm, and 2.2% in the 500 nm range are reported. These InGaN-based devices offer dramatic improvement in size, weight, and cost over conventional gas and solid state lasers and may enable a variety of new applications in defense and security.
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James W. Raring, James W. Raring, Eric M. Hall, Eric M. Hall, Matthew C. Schmidt, Matthew C. Schmidt, Christiane Poblenz, Christiane Poblenz, Ben Li, Ben Li, Nick Pfister, Nick Pfister, Don Kebort, Don Kebort, Yu-Chia Chang, Yu-Chia Chang, Daniel F. Feezell, Daniel F. Feezell, Richard Craig, Richard Craig, James S. Speck, James S. Speck, Steven P. Denbaars, Steven P. Denbaars, Shuji Nakamura, Shuji Nakamura, } "State-of-the-art continuous-wave InGaN laser diodes in the violet, blue, and green wavelength regimes", Proc. SPIE 7686, Laser Technology for Defense and Security VI, 76860L (4 May 2010); doi: 10.1117/12.849713; https://doi.org/10.1117/12.849713
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