Translator Disclaimer
4 May 2010 State-of-the-art continuous-wave InGaN laser diodes in the violet, blue, and green wavelength regimes
Author Affiliations +
We present state-of-the-art performance from green, blue, and violet InGaN-based laser diodes fabricated on nonpolar and semipolar GaN substrates. Using these novel crystal orientations, we demonstrate high power, high efficiency, continuous-wave operation from single-lateral-mode electrically pumped laser diodes at wavelengths from 405 nm to 500 nm. Additionally, we present the longest reported continuous-wave lasing demonstration of 525 nm and an output power of over 9 mW at 521 nm. Wall-plug efficiencies of over 25% in the violet region, 17.5% in the blue region, over 5% at 472nm, and 2.2% in the 500 nm range are reported. These InGaN-based devices offer dramatic improvement in size, weight, and cost over conventional gas and solid state lasers and may enable a variety of new applications in defense and security.
© (2010) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
James W. Raring, Eric M. Hall, Matthew C. Schmidt, Christiane Poblenz, Ben Li, Nick Pfister, Don Kebort, Yu-Chia Chang, Daniel F. Feezell, Richard Craig, James S. Speck, Steven P. Denbaars, and Shuji Nakamura "State-of-the-art continuous-wave InGaN laser diodes in the violet, blue, and green wavelength regimes", Proc. SPIE 7686, Laser Technology for Defense and Security VI, 76860L (4 May 2010);


Back to Top