23 July 1976 Distributed Feedback GaAs/GaAlAs Diode Lasers
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Proceedings Volume 0077, Fibers and Integrated Optics; (1976) https://doi.org/10.1117/12.975711
Event: 1976 SPIE/SPSE Technical Symposium East, 1976, Reston, United States
Abstract
Within the last few years GaAs/GaAlAs heterostructure laser diodes have been developed which are capable of continuous operation at 300°K and above for prolonged periods of time.(1-5) These lasers are suitable for a variety of uses including fiber optic communication, optical scanning, and writing of high density optical memories. However, in order to take full advantage of the small size and increase the utility of the devices in complex systems, it is desirable to be able to integrate these lasers into a monolithic optical circuit. The distributed feedback, a (DFB) laser presents just such an opportunity.
© (1976) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
D. R. Scifres, D. R. Scifres, R. D. Burnham, R. D. Burnham, W. Streifer, W. Streifer, "Distributed Feedback GaAs/GaAlAs Diode Lasers", Proc. SPIE 0077, Fibers and Integrated Optics, (23 July 1976); doi: 10.1117/12.975711; https://doi.org/10.1117/12.975711
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