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25 August 1987 Application Of Halogenated Polymethylstyrenes To X-Ray Resists
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Abstract
A series of chlorinated polymethylstyrenes (CPMSs) and brominated polymethylstyrenes (BPMSs) were synthesized by anionic polymerization of methylstyrene followed by radical halogenation. Radiation chemistry of CPMSs and BPMSs were investigated using RhLa X-rays as a radiation source. Resist sensitivity of CPMSs and BPMSs increases with increases in molecular weight and halogen content up to 90 unit% of halogenation. In addition, CPMSs have higher sensitivity than BPMSs toward RhLa X-rays. Infrared spectroscopic studies of radiation induced chemical reactions of the polymers showed that X-ray radiation caused the dissociation of C-X (Cl or Br) bonds and that the dissociation was much faster for CPMSs than BPMSs in spite of lower mass absorption coefficients of CPMSs. CPMS-5 (Mw=49x104, Cl cont.=92 unit%) exhibits the highest sensitivity of 15 mJ/cm2 (Dg) while maintaining high contrast value of 1.3. The patterning tests of CPMS-5 were done with a MICRONIX MX-15 which had a palladium source. As a result, 0.6 μm resist patterns were obtained despite its penumbral blurring being 0.35 μm. It is confirmed that CPMS-5 is one of the best X-ray resists from a practical point of view.
© (1987) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Tsuguo Yamaoka, Mitsunobu Koshiba, Yoichi Kamoshida, Hideo Takahashi, and Yoshiyuki Harita "Application Of Halogenated Polymethylstyrenes To X-Ray Resists", Proc. SPIE 0771, Advances in Resist Technology and Processing IV, (25 August 1987); https://doi.org/10.1117/12.940330
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