Paper
25 August 1987 Brominated Poly(1-Trimethylsilylpropyne): A Sensitive Deep-Uv Resist For Two-Layer Lithography
Antoni S. Gozdz, Gregory L. Baker, Cynthia Klausner, Murrae J. Bowden
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Abstract
Brominated poly(1-trimethylsilylpropyne) (PTMSP-Br) is a sensitive, positive DUV resist suitable for application in a two-layer lithographic process. It is readily degraded in the presence of oxygen by DUV radiation (λ<280 nm), has excellent film formingproperties and is stable in air up to ~200°C. The sensitivity of PTMSP-Br is dependent on the degree of bromination and time and temperature of post-exposure baking. Samples having xB, from 0.1 to 0.2 per monomer unit and post-exposure baked for 1 h at 140°C exhibit sensitivities (Dr) of 20 to 25 mJ/cm2 with a contrast (γ) of 3.5-4.0. Half-µm lines and spaces have been generated by contact printing at 260 nm using 1-butanol as a developer and transferred into 1.5-2.5 µm-thick planarizing layers by anisotropic reactive ion etching. The etching rate ratio of PTMSP-Br vs. a hard-baked Novolac-type photoresist is better than 1:25.
© (1987) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Antoni S. Gozdz, Gregory L. Baker, Cynthia Klausner, and Murrae J. Bowden "Brominated Poly(1-Trimethylsilylpropyne): A Sensitive Deep-Uv Resist For Two-Layer Lithography", Proc. SPIE 0771, Advances in Resist Technology and Processing IV, (25 August 1987); https://doi.org/10.1117/12.940303
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Cited by 5 scholarly publications.
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KEYWORDS
Polymers

Deep ultraviolet

Lithography

Absorption

Reactive ion etching

Oxygen

Etching

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