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10 May 2010Mechanism of photoluminescence investigation of Si nano-crystals
embedded in SiOx
Nanoscaled Si (Ge) systems continue to be of interest for their potential application as Si (Ge) based light emiting
materials and photonic structures. Optical properties of such systems are sensitive to nanocrystallite (NC) size
fluctuations as well as to defects effects due to large surface to volume ratio in small NCs. Intensive research of Si (Ge)
NCs is focused on the elucidation of the mechanism of radiative recombination with the aim to provide high efficient
emission at room temperature in different spectral range. The bright visible photoluminescence (PL) of the Si (Ge)-SiOX
system was investigated during last 15 years and several models were proposed. It was shown that blue (~2.64 eV) and
green (~2.25 eV) PL are caused by various emitting centers in silicon oxide [1], while the nature of the more intensive
red (1.70-2.00 eV) and infrared (0.80-1.60 eV) PL bands steel is no clear. These include PL model connected whit
quantum confinement effects in Si (Ge) nanocrystallites [2-4], surface states on Si (Ge) nanocrystallites, as well as
defects at the Si/SiOX (Ge/SiOX) interface and in the SiO2 layer [5-11]. It should be noted, that even investigation of PL
on single Si quantum dots [12] cannot undoubtedly confirm the quantum confinement nature of red emission.
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A. Vivas Hernández, T. V. Torchynska, I. Guerrero Moreno, "Mechanism of photoluminescence investigation of Si nano-crystals embedded in SiOx," Proc. SPIE 7712, Nanophotonics III, 771234 (10 May 2010); https://doi.org/10.1117/12.854851