13 May 2010 Photonic crystal microcavity in GaN-on-sapphire slab waveguide for sensor applications
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Abstract
Gallium nitride is an important material for the contemporary optoelectronics. Large electric band gap, high temperature resistivity and environmental resistance make GaN interesting also for sensor applications. However, asymmetric structure of GaN-on-sapphire slab waveguide, grown as a conventional epitaxial heterostructure, poses a problem with achieving high quality (Q) factor resonators. In this paper, issues related to an asymmetric structure of a waveguide and theoretical possibilities to achieve high Q-factor resonator in the GaN planar structures are discussed. Three dimensional (3-D) finite-difference time-domain (FDTD) modeling tools were used. It is shown that the highest Q-factor value of ~ 23 000 is obtained for a symmetrical membrane in L9 (nine points-defect cavity) micro-cavity based on GaN planar waveguide. In reference to the simulation results, we also discuss the technological issues, i.e. fabrication of photonic crystal patterns in GaN layers. New approach presented here included deep RIE etching with use of only single masking layer and conductive polymer usage in e-beam pattering. Possible applications of the micro-resonators for sensor applications are discussed.
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Szymon Lis, Rafal Dylewicz, Konrad Ptasiński, Sergiusz Patela, "Photonic crystal microcavity in GaN-on-sapphire slab waveguide for sensor applications", Proc. SPIE 7713, Photonic Crystal Materials and Devices IX, 77131N (13 May 2010); doi: 10.1117/12.854245; https://doi.org/10.1117/12.854245
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