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13 May 2010 Design, modeling and optimization of gallium nitride-based photonic crystal structures
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We present results of numerical modeling of photonic crystal (PhC) structures fabricated in gallium nitride (GaN). GaN is a wide band gap semiconductor material with large refractive index and very good thermal and mechanical properties, so it is considered a valuable candidate for photonic crystal application - in particular for devices exposed to the harsh environment. In this paper are considered the ideal 2D PhC with infinite high for a different lattice structures and calculated optical band gap maps for each. We also calculated air-bridge type slab and "sandwich-type" PhC slabs with finite height. The dependence of transmission and reflection spectra on holes size, width and profile of "sandwich-type" PhC slab structure are investigated. All calculations were performed using plane wave expansion method (PWE) and finite difference time domain method (FDTD).
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Konrad Ptasínski, Szymon Lis, Marcin Wielichowski, and Sergiusz Patela "Design, modeling and optimization of gallium nitride-based photonic crystal structures", Proc. SPIE 7713, Photonic Crystal Materials and Devices IX, 77131Z (13 May 2010);


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