13 May 2010 Quasi-optical technique for sensing bond quality of silicon wafers
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Abstract
In this paper, we investigate a novel fast and reliable method to check the bonding quality of silicon wafers. It is based on illuminating the wafers with a high frequency waves (110 - 170 GHz) using quasi-optical technique. The reflected energy is used to evaluate the bonding strength. The reported experimental study is compared with the Infrared images.
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A. Elhawil, A. Elhawil, I. Huynen, I. Huynen, J.-P. Raskin, J.-P. Raskin, C. Roda Neve, C. Roda Neve, B. Olbrechts, B. Olbrechts, J. Stiens, J. Stiens, R. Vounckx, R. Vounckx, } "Quasi-optical technique for sensing bond quality of silicon wafers", Proc. SPIE 7716, Micro-Optics 2010, 77161R (13 May 2010); doi: 10.1117/12.853667; https://doi.org/10.1117/12.853667
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