13 May 2010 Quasi-optical technique for sensing bond quality of silicon wafers
Author Affiliations +
In this paper, we investigate a novel fast and reliable method to check the bonding quality of silicon wafers. It is based on illuminating the wafers with a high frequency waves (110 - 170 GHz) using quasi-optical technique. The reflected energy is used to evaluate the bonding strength. The reported experimental study is compared with the Infrared images.
© (2010) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
A. Elhawil, A. Elhawil, I. Huynen, I. Huynen, J.-P. Raskin, J.-P. Raskin, C. Roda Neve, C. Roda Neve, B. Olbrechts, B. Olbrechts, J. Stiens, J. Stiens, R. Vounckx, R. Vounckx, } "Quasi-optical technique for sensing bond quality of silicon wafers", Proc. SPIE 7716, Micro-Optics 2010, 77161R (13 May 2010); doi: 10.1117/12.853667; https://doi.org/10.1117/12.853667


Back to Top