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14 May 2010 Accuracy of ellipsometric measurements of Si-SiO2 structures
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Abstract
We consider features and restrictions of ellipsometry as applied to the system consisting of a silicon dioxide film on silicon, which is widely used in nanoelectronics. A method is developed for ellipsometric determination of the presence or absence of the "film-substrate" interfacial layer. Contributions of various factors into the total measurement uncertainty are analyzed, including the factors related to the ellipsometer characteristics.
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V. P. Gavrilenko, Yu. A. Novikov, A. V. Rakov, and P. A. Todua "Accuracy of ellipsometric measurements of Si-SiO2 structures", Proc. SPIE 7718, Optical Micro- and Nanometrology III, 77181B (14 May 2010); https://doi.org/10.1117/12.853898
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