Accuracy of ellipsometric measurements of Si-SiO2 structures

V. P. Gavrilenko; Yu. A. Novikov; A. V. Rakov; P. A. Todua

doi:10.1117/12.853898

14 May 2010 Accuracy of ellipsometric measurements of Si-SiO₂ structures

V. P. Gavrilenko, Yu. A. Novikov, A. V. Rakov, P. A. Todua

Proceedings Volume 7718, Optical Micro- and Nanometrology III; 77181B (2010) https://doi.org/10.1117/12.853898
Event: SPIE Photonics Europe, 2010, Brussels, Belgium

Abstract

We consider features and restrictions of ellipsometry as applied to the system consisting of a silicon dioxide film on silicon, which is widely used in nanoelectronics. A method is developed for ellipsometric determination of the presence or absence of the "film-substrate" interfacial layer. Contributions of various factors into the total measurement uncertainty are analyzed, including the factors related to the ellipsometer characteristics.

Citation Download Citation

V. P. Gavrilenko, Yu. A. Novikov, A. V. Rakov, and P. A. Todua "Accuracy of ellipsometric measurements of Si-SiO₂ structures", Proc. SPIE 7718, Optical Micro- and Nanometrology III, 77181B (14 May 2010); https://doi.org/10.1117/12.853898

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