13 May 2010 Carrier depletion based silicon optical modulators
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Abstract
Silicon optical modulators have generated an increasing interest in the recent years, as their performances are crucial to achieve high speed optical links. Among possibilities to achieve optical modulation in silicon-based materials, index variation by free carrier concentration variation has demonstrated good potentiality. High speed and low loss silicon modulators can be obtained by carrier depletion inside lateral PN or PIPIN diodes. When the diode is reverse biased, refractive index variations are obtained and then phase modulation of the guided wave is obtained. Mach-Zehnder interferometers are used to convert phase modulation into intensity modulation. Experimental results are presented for both PN and PIPIN diodes.
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Delphine Marris-Morini, Gilles Rasigade, Laurent Vivien, David J. Thomson, Frédéric Y. Gardes, Graham T. Reed, Jean-Marc Fédéli, Paul Crozat, Eric Cassan, "Carrier depletion based silicon optical modulators", Proc. SPIE 7719, Silicon Photonics and Photonic Integrated Circuits II, 771903 (13 May 2010); doi: 10.1117/12.855255; https://doi.org/10.1117/12.855255
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